Design of Dual-Band Power Amplifier for the RFID Frequency-Band

Design of an S-band Ultra-low-noise Amplifier with Frequency Band Switching Capability

In this paper, an ultra-low-noise amplifier with frequency band switching capability is designed, simulated and fabricated. The two frequency ranges of this amplifier consist of the 2.4 to 2.5 GHz and 3.1 GHz to 3.15 GHz frequency bands. The designed amplifier has a noise figure of less than 1dB, a minimum gain of 23 dB and a VSWR of less than 2 in the whole frequency band. The design process s...

A Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers

In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...

Design of Dual-Band Double Negative Metamaterials

A dual-band artificial magnetic material and then a dual-band double-negative metamaterial structure based on symmetric spiral resonators are presented. An approximate analytical model is used for the initial design of the proposed structures. The electromagnetic parameters of the proposed metamaterial structure retrieved using an advanced parameter retrieval method based on the causality princ...

Dual-band Power Amplifier for Wireless Communication Base Stations

Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...